s m d ty p e w w w . ke x in . com . c n 1 m osfe t du al n- ch an n el m osf et f dg 6301n ( k d g 6 3 0 1 n ) f e a tu r e s v d s ( v ) = 2 5 v i d = 2 2 0 m a ( v g s = 4 . 5 v ) r d s ( o n ) 4 ( v g s = 4 . 5 v ) r d s ( o n ) 5 ( v g s = 2 . 7 v ) g a t e - s o u r c e z e n e r f o r e s d r u g g e d n e s s ( > 6 k v h u m a n b o d y m o d e l ) . 1 s 2 g1 3 d2 1 s1 2 g1 3 d2 4 s2 5 g2 6 d1 a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 2 5 v g s 8 c o n t i n u o u s 2 2 0 p u l s e d 6 5 0 p d 3 0 0 m w r t h ja 4 1 5 / w t j 1 5 0 t st g - 5 5 t o 1 5 0 p o w e r d i s s i p a t i o n h u m a n b o d y m o d e l ( 1 0 0 p f / 1 5 0 0 w ) e s d m a k v 6 v e l e c t r o s t a t i c d i s c h a r g e r a t i n g m i l - s t d - 8 8 3 d p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t 1 or 4 6 or 3 5 or 2 4 or 1 2 or 5 3 or 6
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t du al n- ch an n el m osf et f dg 6301n ( k d g 6 3 0 1 n ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 n o t e . 1 : p u l s e t e s t : p u l s e w i d t h < 3 0 0 s , d u t y c y c l e < 2 . 0 % . m a r k i n g m a r k i n g . 0 1 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 2 5 v v d s = 2 0 v , v g s = 0 v 1 v d s = 2 0 v , v g s = 0 v , t j = 5 5 1 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 8 v 1 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 0 . 6 5 0 . 8 5 1 . 5 v v g s = 4 . 5 v , i d = 2 2 0 m a 2 . 6 4 v g s = 4 . 5 v , i d = 2 2 0 m a t j = 1 2 5 5 . 3 7 v g s = 2 . 7 v , i d = 1 9 0 m a 3 . 7 5 o n s t a t e d r a i n c u r r e n t i d ( o n ) v g s = 4 . 5 v , v d s = 5 v 0 . 2 2 a f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 5 v , i d = 2 2 0 m a 0 . 2 s i n p u t c a p a c i t a n c e c i ss 9 . 5 o u t p u t c a p a c i t a n c e c o ss 6 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 1 . 3 t o t a l g a t e c h a r g e q g 0 . 2 9 0 . 4 g a t e s o u r c e c h a r g e q g s 0 . 1 2 g a t e d r a i n c h a r g e q g d 0 . 0 3 t u r n - o n d e l a y t i m e t d ( o n ) 5 1 0 t u r n - o n r i s e t i m e t r 4 . 5 1 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 4 8 t u r n - o f f f a l l t i m e t f 3 . 2 7 m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 0 . 2 5 a d i o d e f o r w a r d v o l t a g e v s d i s = 2 5 0 m a , v g s = 0 v ( n o t e . 1 ) 0 . 8 1 . 2 v p f n c n s z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s a v g s = 4 . 5 v , v d s = 5 v , i d = 5 0 0 m a , r g = 5 0 r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e v g s = 0 v , v d s = 1 0 v , f = 1 m h z v g s = 4 . 5 v , v d s = 5 v , i d = 2 2 0 m a
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t du al n- ch an n el m osf et f dg 6301n ( k d g 6 3 0 1 n ) t y p i c a l ch a r a c te r i s i ti c s figure 1. on-region characteristic s . figure 2. on-resistance variation wit h drain current and gate voltage . figure 3. on-resistance variation with temperature . figu re 5 . t ra n s f er c h arac t er i s ti cs . figure 4 . on-resistance variation with gate-t o -source voltage. -50 -25 0 25 50 75 100 125 150 0 . 6 0 . 8 1 1 . 2 1 . 4 1 . 6 1 . 8 t , junction temperature (c ) dr ai n -so urc e o n - r esista nc e j r , n o r ma l ize d d s(o n ) v = 4.5 v g s i = 0.22 a d 0 1 2 3 4 5 0 0. 1 0. 2 0. 3 0. 4 0. 5 v , drain-source voltage (v ) i , dra i n-s o urce curren t (a ) v =4.5 v g s d s d 2.5 v 3.0v 2.0 v 3.5 v 2.7 v 0 0. 1 0. 2 0. 3 0. 4 2 2. 5 3 3. 5 4 4. 5 5 i , drain current (a ) dra i n-s o urce o n-res i s t anc e v = 2.5 v g s d r , n o rm a l ize d d s(o n ) 5.0 v 4.5 v 2.7 v 4.0 v 3.5 v 3.0 v 1 2 3 4 5 0 4 8 1 2 1 6 2 0 v , ga t e to source volta g e ( v ) r , o n - r esis t an c e (ohm ) g s ds(on ) 25 c i = 0 . 10 a d t =125c a 0. 5 1 1. 5 2 2. 5 3 0 0 . 0 5 0. 1 0 . 1 5 0. 2 v , gate to source voltage (v ) i , dr ai n curr e n t (a ) v = 5 v d s g s d t = -55 c j 125 c 25 c 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 0.000 1 0 . 00 1 0.0 1 0 . 1 0 . 4 v , bo d y d io d e fo r wa rd vo l tage (v ) i , reverse drain current (a ) 25 c -55 c v = 0 v g s s d s t = 125 c j figure 6 . body d iode f orward vol ta ge v ari a ti o n with source current and temperature.
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . du al n- ch an n el m osf et f dg 6301n ( k d g 6 3 0 1 n ) t y p i c a l ch a r a c te r i s i ti c s figure 1 0 . single pulse maximum powe r dissipation . figu re 8 . capacitance characteristic s . figu re 7 . gate charge characteristics . f igure 9. maximum safe operating area. 0 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 5 6 q , g a t e char g e (nc ) v , gate-source voltage (v ) g g s i = 0.22 a d v = 5 v d s 10 v 0. 4 0. 8 2 5 1 0 2 5 4 0 0 . 0 1 0 . 0 3 0. 1 0. 3 1 v , dra i n-s o urce v o l t a g e (v ) i , drain current (a ) rds(on) limi t d d c d s 10s 100m s 10m s v = 4 . 5 v single puls e r = 415 c / w t = 25 c j a g s a 1s 0 . 1 0 . 3 1 3 10 25 2 3 5 8 15 30 v , drain to source voltage (v ) capacitance (pf ) d s c is s f = 1 m h z v = 0 v g s c o s s c rs s 0.000 1 0.00 1 0.0 1 0 . 1 1 1 0 200 0 1 0 2 0 3 0 4 0 5 0 s i n g le pulse ti me (sec ) power (w ) single puls e r =415c/ w t = 25 c ja a 0.000 1 0 . 00 1 0.0 1 0. 1 1 1 0 10 0 20 0 0 . 00 2 0 . 00 5 0.0 1 0.0 2 0.0 5 0. 1 0. 2 0. 5 1 t , time (sec ) transient thermal resistanc e r(t), normalized effectiv e 1 s ingle p ul s e d = 0 . 5 0.1 0.05 0 . 02 0 . 01 0. 2 duty cycle, d = t / t 1 2 t - t = p * r (t ) a j p(pk ) t 1 t 2 j a r (t) = r(t) * r r =41 5 c/ w j a j a j a figu re 1 1 . trans ient t hermal res pons e curv e . thermal characterization performed using the conditions described in note 1 . tr an s ien t t he rm al response will change depending on the circuit board design .
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